general description the ald1101 is a monolithic dual n-channel matched transistor pair intended for a broad range of analog applications. these enhancement- mode transistors are manufactured with advanced linear devices' en- hanced acmos silicon gate cmos process. the ald1101 offers high input impedance and negative current tempera- ture coefficient. the transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for switching and amplifying applications in +2v to +12v systems where low input bias current, low input capacitance and fast switching speed are desired. since these are mosfet devices, they feature very large (almost infinite) current gain in a low frequency, or near dc, operating environment. when used with an ald1102, a dual cmos analog switch can be constructed. in addition, the ald1101 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications. the ald1101 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. the high input impedance and the high dc current gain of the field effect transistors result in extremely low current loss through the control gate. the dc current gain is limited by the gate input leakage current, which is specified at 50pa at room temperature. for example, dc beta of the device at a drain current of 5ma at 25 c is = 5ma/50pa = 100,000,000. a dvanced l inear d evices, i nc. dual n-channel matched mosfet pair ald1101a/ald1101b ald1101 applications ? precision current mirrors ? precision current sources ? analog switches ? choppers ? differential amplifier input stage ? voltage comparator ? data converters ? sample and hold ? analog inverter features ? low threshold voltage of 0.7v ? low input capacitance ? low vos grades -- 2mv, 5mv, 10mv ? high input impedance -- 10 12 w typical ? negative current (i ds ) temperature coefficient ? enhancement-mode (normally off) ? dc current gain 10 9 operating temperature range* -55 c to +125 c0 c to +70 c0 c to +70 c 8-pin 8-pin 8-pin cerdip plastic dip soic package package package ald1101a pa ald1101b pa ald1101 da ald1101 pa ald1101 sa * contact factory for industrial temperature range. ordering information block diagram source 1 (1) substrate (8) source 2 (7) gate 2 (6) drain 1 (3) gate 1 (2) drain 2 (5) pin configuration 1 2 3 4 8 7 6 5 source 1 gate 1 drain 1 nc substrate source 2 gate 2 drain 2 top view da, pa, sa package ? 1998 advanced linear devices, inc. 415 tasman drive, sunnyvale, california 94089 -1706 tel: (408) 747-1155 fax: (408) 747-1286 http://www.aldinc.com
ald1101a/ald1101b advanced linear devices 2 ald1101 absolute maximum ratings drain-source voltage, v ds 13.2v gate-source voltage, v gs 13.2v power dissipation 500 mw operating temperature range pa, sa package 0 c to +70 c da package -55 c to +125 c storage temperature range -65 c to +150 c lead temperature, 10 seconds +260 c gate threshold voltage v t 0.4 0.7 1.0 0.4 0.7 1.0 0.4 0.7 1.0 v i ds = 10 m a v gs = v ds offset voltage v os 2 5 10 mv i ds = 100 m a v gs = v ds v gs1 - v gs2 gate threshold tc vt -1.2 -1.2 -1.2 mv/ c temperature drift on drain current i ds (on) 25 40 25 40 25 40 ma v gs = v ds = 5v transconductance g fs 5 10 5 10 5 10 mmho v ds = 5v i ds = 10ma mismatch d g fs 0.5 0.5 0.5 % output g os 200 200 200 m mho v ds = 5v i ds = 10ma conductance drain source r ds(on) 50 75 50 75 50 75 w v ds = 0.1v v gs = 5v on resistance drain source on resistance d r ds(on) 0.5 0.5 0.5 % v ds = 0.1v v gs = 5v mismatch drain source breakdown bv dss 12 12 12 v i ds = 10 m a v gs =0v voltage off drain current i ds(off) 0.1 4 0.1 4 0.1 4 na v ds =12v v gs = 0v 444 m at a = 125 c gate leakage i gss 150 150 1 50pa v ds =0v v gs =12v current 10 10 10 na t a = 125 c input c iss 610 610 6 10pf capacitance operating electrical characteristics t a = 25 c unless otherwise specified ald 1101a ald1101b ald1101 test parameter symbol min typ max min typ max min typ max unit conditions
ald1101a/ald1101b advanced linear devices 3 ald1101 typical performance characterisitcs output characteristics drain -source current (ma) 160 120 80 0 40 v bs = 0v t a = 25 c v gs = 12v 10v 8v 6v 4v 2v drain-source voltage (v) 02 4 681012 low voltage output characteristics drain -source voltage (mv) drain-source current (ma) -160 -80 0 80 160 -8 8 4 0 -4 4v v gs = 12v 6v v bs = 0v t a = 25 c 2v forward transconductance ( mho) forward transconductance vs. drain-source voltage drain -source voltage (v) 1 x10 5 5 x10 4 1 x10 4 5 x10 3 2 x10 3 2 x10 4 1 x10 3 t a = +125 c t a = +25 c i ds = 10ma i ds = 1ma 02 4 681012 v bs = 0v f = 1khz gate - source voltage (v) transfer characteristic with substrate bias drain-source current ( a) 20 15 10 5 0 0 0.8 1.6 2.4 3.2 4.0 v bs = 0v -2v -4v -6v -8v -10v -12v v gs = v ds t a = 25 c gate source voltage (v) r ds (on) vs. gate - source voltage drain - source on resistance ( ) 10000 1000 100 10 2 0 4 6 8 10 12 v ds = 0.2v v bs = 0v t a = +25 c t a = +125 c off drain - current vs. temperature temperature ( c) off - drain source current (a) -50 -25 +25 +50 +75 +125 +100 0 10 x 10 -6 v ds = +12v v gs = v bs = 0v 10 x 10 -12 10 x 10 -9
ald1101a/ald1101b advanced linear devices 4 ald1101
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